Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus

Among layered and 2D semiconductors, there are many with substantial optical anisotropy within individual layers, including group‐IV monochalcogenides MX ( M = Ge or Sn X S Se) black phosphorous (bP). Recent work has suggested that the in‐plane crystal orientation in such materials can be switched (e.g., rotated through 90°) an ultrafast, displacive (i.e., nondiffusive), nonthermal, lower‐power mechanism by strong electric fields, due to dielectric anisotropy. In theory, this represents a new for light‐controlling‐light photonic integrated circuits (PICs). Herein, numerical device modeling is used study concepts based on switching of SnSe bP PICs. Ring resonators 1 × 2 switches resonant conditions change orientations simulated. The results broadly applicable ferroelectric ferroelastic structures SnO, GeS, GeSe.